SO692 small signal pnp transistor n silicon epitaxial planar pnp transistors n miniature plastic package for application in surface mounting circuits n high voltage transistor for video amplifier n npn complement is so642 internal schematic diagram march 1996 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -300 v v ceo collector-emitter voltage (i b = 0) -300 v v ebo emitter-base voltage (i c =0) -5 v i c collector current -0.1 a i cm collector peak current -0.3 a p tot total dissipation at t c =25 o c310mw t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 sot-23 type marking SO692 p39 1/4
thermal data r thj-amb ? r thj-sr ? thermal resistance junction-ambient max thermal resistance junction-substrate max 450 320 o c/w o c/w ? mounted on a ceramic substrate area = 15 x 15 x 0.7 mm electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e =0) v cb = -200 v -100 na v ( br)cbo * collector-emitter breakdown voltage (i e =0) i c =-100 m a-300v v ( br)ceo * collector-emitter breakdown voltage (i b =0) i c =-1ma -300 v v (br)ebo emitter-base breakdown voltage (i c =0) i e =-100 m a-5v v ce(sat) * collector-emitter saturation voltage i c =-20ma i b =-2ma -0.5 v v be(s at) * base-emitter saturation voltage i c =-20ma i b =-2ma -0.9 v h fe * dc current gain i c =-1ma v ce =-10v i c =-10ma v ce =-10v i c =-30ma v ce =-10v 25 40 25 f t transition frequency i c =-10ma v ce =-20 v f =50 mhz 50 mhz c cb collector base capacitance v cb =-20v f=1mhz 6 pf * pulsed: pulse duration = 300 m s, duty cycle 2% SO692 2/4
dim. mm mils min. typ. max. min. typ. max. a 0.85 1.1 33.4 43.3 b 0.65 0.95 25.6 37.4 c 1.20 1.4 47.2 55.1 d 2.80 3 110.2 118 e 0.95 1.05 37.4 41.3 f 1.9 2.05 74.8 80.7 g 2.1 2.5 82.6 98.4 h 0.38 0.48 14.9 18.8 l 0.3 0.6 11.8 23.6 m 0 0.1 0 3.9 n 0.3 0.65 11.8 25.6 o 0.09 0.17 3.5 6.7 0044616/b sot-23 mechanical data SO692 3/4
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersede s and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . SO692 4/4
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